Design, simulation and comparative analysis of a novel FinFET based astable multivibrator

被引：12

作者：

Gupta, Aayush ^{[1
]}

Mathur, Ruchir ^{[1
]}

Nizamuddin, M. ^{[1
]}

机构：

[1] Jamia Millia Islamia, Dept Elect & Commun Engn, New Delhi 110025, India

来源：

AEU-INTERNATIONAL JOURNAL OF ELECTRONICS AND COMMUNICATIONS | 2019年 / 100卷

关键词：

Astable Multivibrator (AMV); Maximum usable frequency; Slew rate; CMOS; FinFET; VOLTAGE; MOSFET; DELAY; GATE;

D O I：

10.1016/j.aeue.2018.12.007

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this work, design and simulation of FinFET and CMOS based Astable Multivibrator (AMV) have been performed. Performance of proposed circuit was compared by varying resistance-capacitance (R-C) delay topology, supply voltage (V-dd) and operating temperature (T) at 45 nm technology node using spice simulator. FinFET-AMV shows significant improvement over CMOS-AMV. An increase of 1.66% in amplitude, 84.4% in rise time and 73.3% in fall time of output square wave in FinFET-AMV was observed. A significant increase in the slew rate by 398% which improved the percentage wave slewed by 77.3% resulted in the increase of bandwidth by 655% from 768 MHz to 5.8 GHz. It was also observed that FinFET-AMV Starts to function properly at 0.39 V compared to CMOS-AMV which starts to function properly at 0.58 V. The power dissipation was found to be 2.23 times in FinFET-AMV, however, the study revealed that this could be improved by lowering the supply voltage. (C) 2019 Elsevier GmbH. All rights reserved.

引用

页码：163 / 171

页数：9

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