Fringing fields in sub-0.1 μm fully depleted SOI MOSFETs:: optimization of the device architecture

被引：128
|
作者：
Ernst, T
Tinella, C
Raynaud, C
Cristoloveanu, S
机构：
[1] ENSERG, UMR, LPCS, F-38016 Crolles, France
[2] ST Microelectron, F-38920 Crolles, France
[3] CEA, G, DMEL, SPLIT,LETI,CEA, F-38054 Grenoble, France
来源：
SOLID-STATE ELECTRONICS | 2002年 / 46卷 / 03期
关键词：
SOI; MOSFET; DIBL; full depletion; short-channel effects; fringing field;
D O I：
10.1016/S0038-1101(01)00111-3
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Lateral field penetration in the buried oxide (BOX) and underlying substrate of fully depleted SOI MOSFETs is responsible for a dramatic increase of short-channel effects. An original compact model of the latter phenomena is proposed and used to explore optimized architectures of sub-100 nm transistors. Various architectures including the ground-plane MOSFET, are compared using a quasi-2D analysis in order to evaluate the contribution of the BOX to short-channel effects. (C) 2002 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码：373 / 378
页数：6
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