Fringing fields in sub-0.1 μm fully depleted SOI MOSFETs:: optimization of the device architecture

被引：128

作者：

Ernst, T

Tinella, C

Raynaud, C

Cristoloveanu, S

机构：

[1] ENSERG, UMR, LPCS, F-38016 Crolles, France

[2] ST Microelectron, F-38920 Crolles, France

[3] CEA, G, DMEL, SPLIT,LETI,CEA, F-38054 Grenoble, France

来源：

SOLID-STATE ELECTRONICS | 2002年 / 46卷 / 03期

关键词：

SOI; MOSFET; DIBL; full depletion; short-channel effects; fringing field;

D O I：

10.1016/S0038-1101(01)00111-3

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Lateral field penetration in the buried oxide (BOX) and underlying substrate of fully depleted SOI MOSFETs is responsible for a dramatic increase of short-channel effects. An original compact model of the latter phenomena is proposed and used to explore optimized architectures of sub-100 nm transistors. Various architectures including the ground-plane MOSFET, are compared using a quasi-2D analysis in order to evaluate the contribution of the BOX to short-channel effects. (C) 2002 Elsevier Science Ltd. All rights reserved.

引用

页码：373 / 378

页数：6

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