Blistering of H-implanted GaN

被引：31

作者：

Kucheyev, SO ^{[1
]}

Williams, JS

Jagadish, C

Zou, J

Li, G

机构：

[1] Australian Natl Univ, Res Sch Phys Sci & Engn, Dept Elect Mat Engn, Canberra, ACT 0200, Australia

[2] Univ Sydney, Australian Key Ctr Microscopy & Microanal, Sydney, NSW 2006, Australia

[3] Ledex Corp, Kaohsiung Cty, Taiwan

来源：

JOURNAL OF APPLIED PHYSICS | 2002年 / 91卷 / 06期

关键词：

D O I：

10.1063/1.1430533

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Mechanisms of blistering of wurtzite GaN films implanted with H ions are studied. In particular, we report on the influence of the following parameters on the blistering process: (i) ion energy (from 20 to 150 keV), (ii) ion dose (up to 1.2x10(18) cm(-2)), (iii) implantation temperature (from -196 to 250 degreesC), and (iv) annealing temperature (up to 900 degreesC). Results show that both the onset of blistering and blistering surface patterns strongly depend on implant conditions. This study may have significant technological implications for ion slicing and "etching" of GaN using high-dose implantation with H ions. (C) 2002 American Institute of Physics.

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页码：3928 / 3930

页数：3

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