Strains Induced by Point Defects in Graphene on a Metal

被引：50

作者：

Blanc, Nils ^{[1
,2
,3
]}

Jean, Fabien ^{[1
,2
]}

Krasheninnikov, Arkady V. ^{[4
,5
]}

Renaud, Gilles ^{[3
]}

Coraux, Johann ^{[1
,2
]}

机构：

[1] CNRS, Inst NEEL, F-38042 Grenoble 9, France

[2] Univ Grenoble 1, F-38042 Grenoble 9, France

[3] INAC, CEA UJF, F-38054 Grenoble 9, France

[4] Aalto Univ, Dept Appl Phys, FI-00076 Aalto, Finland

[5] Univ Helsinki, Dept Phys, FI-00014 Helsinki, Finland

来源：

PHYSICAL REVIEW LETTERS | 2013年 / 111卷 / 08期

基金：

芬兰科学院;

关键词：

D O I：

10.1103/PhysRevLett.111.085501

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Strains strongly affect the properties of low-dimensional materials, such as graphene. By combining in situ, in operando, reflection high-energy electron diffraction experiments with first-principles calculations, we show that large strains, above 2%, are present in graphene during its growth by chemical vapor deposition on Ir(111) and when it is subjected to oxygen etching and ion bombardment. Our results unravel the microscopic relationship between point defects and strains in epitaxial graphene and suggest new avenues for graphene nanostructuring and engineering its properties through introduction of defects and intercalation of atoms and molecules between graphene and its metal substrate.

引用

页数：5

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