Fabrication of samples for scanning probe experiments on quantum spin Hall effect in HgTe quantum wells

被引：9

作者：

Baenninger, M. ^{[1
]}

Koenig, M. ^{[1
]}

Garcia, A. G. F. ^{[1
]}

Muehlbauer, M. ^{[2
,3
]}

Ames, C. ^{[2
,3
]}

Leubner, P. ^{[2
,3
]}

Bruene, C. ^{[2
,3
]}

Buhmann, H. ^{[2
,3
]}

Molenkamp, L. W. ^{[2
,3
]}

Goldhaber-Gordon, D. ^{[1
]}

机构：

[1] Stanford Univ, Dept Phys, Stanford, CA 94305 USA

[2] Univ Wurzburg, Phys Inst EP3, D-97074 Wurzburg, Germany

[3] Univ Wurzburg, Rontgen Ctr Complex Mat Syst, D-97074 Wurzburg, Germany

来源：

JOURNAL OF APPLIED PHYSICS | 2012年 / 112卷 / 10期

关键词：

TRANSPORT;

D O I：

10.1063/1.4767362

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present a fabrication process for devices on HgTe quantum wells through which the quantum spin Hall regime can be reached without the use of a top-gate electrode. We demonstrate that a nominally undoped HgTe quantum well can be tuned from p-type to n-type, crossing through the quantum spin Hall regime, using only a back-gate hundreds of microns away. Such structures will enable scanning probe investigations of the quantum spin Hall effect that would not be possible in the presence of a gate electrode on the surface of the wafer. All processes are kept below 80 degrees C to avoid degradation of the heat-sensitive HgTe quantum wells. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4767362]

引用

页数：6

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