Wavelength-dependent determination of the recombination rate coefficients in single-quantum-well GaInN/GaN light emitting diodes

被引：109

作者：

Schiavon, Dario ^{[1
,2
]}

Binder, Michael ^{[1
,3
]}

Peter, Matthias ^{[1
]}

Galler, Bastian ^{[1
]}

Drechsel, Philipp ^{[1
]}

Scholz, Ferdinand ^{[2
]}

机构：

[1] OSRAM Opto Semicond GmbH, D-93055 Regensburg, Germany

[2] Univ Ulm, Inst Optoelekt, D-89081 Ulm, Germany

[3] Fraunhofer Inst Appl Solid State Phys, D-79108 Freiburg, Germany

来源：

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 2013年 / 250卷 / 02期

关键词：

ABC model; charge carrier recombination; InGaN; GaN; LED; EFFICIENCY DROOP;

D O I：

10.1002/pssb.201248286

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The recombination rate coefficients (RRCs) A, B, and C in MOVPE-grown single-quantum-well light emitting diodes spanning the entire blue-green spectral range are determined by fitting efficiency curves and differential carrier lifetimes. The results show definite trends for each of the RRCs: A tendentially decreases with increasing wavelength, B definitely decreases, and C remains approximately constant. Therefore, the increase of the droop with increasing wavelength (the green gap problem) is rather due to the decrease of B than an increase of C. The determined values of C are shown to be similar to what has been predicted by others with first-principles computer simulations accounting for phonon-assisted Auger recombination. Samples grown on sapphire and silicon substrates are compared and show significant differences only for the RRC A, presumably due to the difference in threading dislocation density.

引用

页码：283 / 290

页数：8

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