Electronic conduction in GaN nanowires - art. no. 072111

被引：22
|
作者：
Simpkins, BS [1 ]
Pehrsson, PE [1 ]
Laracuente, AR [1 ]
机构：
[1] USN, Res Lab, Washington, DC 20375 USA
来源：
APPLIED PHYSICS LETTERS | 2006年 / 88卷 / 07期
关键词：
D O I：
10.1063/1.2177629
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Conductivity mechanisms in unintentionally doped GaN nanowires (NWs) are studied. Gated current-voltage measurements and threshold voltage modeling demonstrate the unique impact of device parameters on NW field-effect transistors as compared to conventional systems. Temperature-dependent resistivity results, acquired with a scanning tunneling microscope equipped with multiple tips, reveal only mild temperature dependence at higher temperatures, with temperature-independent resistivity observed below similar to 100 K indicating impurity band conduction. The likely origins and implications of these results are discussed.
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页数：3
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