Electronic conduction in GaN nanowires - art. no. 072111

被引：22

作者：

Simpkins, BS ^{[1
]}

Pehrsson, PE ^{[1
]}

Laracuente, AR ^{[1
]}

机构：

[1] USN, Res Lab, Washington, DC 20375 USA

来源：

APPLIED PHYSICS LETTERS | 2006年 / 88卷 / 07期

关键词：

D O I：

10.1063/1.2177629

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Conductivity mechanisms in unintentionally doped GaN nanowires (NWs) are studied. Gated current-voltage measurements and threshold voltage modeling demonstrate the unique impact of device parameters on NW field-effect transistors as compared to conventional systems. Temperature-dependent resistivity results, acquired with a scanning tunneling microscope equipped with multiple tips, reveal only mild temperature dependence at higher temperatures, with temperature-independent resistivity observed below similar to 100 K indicating impurity band conduction. The likely origins and implications of these results are discussed.

引用

页数：3

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