Effective tuning of the charge state of a single InAs/GaAs quantum dot by an external magnetic field

被引：10

作者：

Moskalenko, E. S. ^{[1
,2
]}

Larsson, L. A. ^{[1
]}

Larsson, M. ^{[1
]}

Holtz, P. O. ^{[1
]}

Schoenfeld, W. V. ^{[3
]}

Petroff, P. M. ^{[3
]}

机构：

[1] Linkoping Univ, IFM Mat Phys, S-58183 Linkoping, Sweden

[2] Russian Acad Sci, AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia

[3] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

来源：

PHYSICAL REVIEW B | 2008年 / 78卷 / 07期

基金：

瑞典研究理事会;

关键词：

D O I：

10.1103/PhysRevB.78.075306

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A microphotoluminescence study of single InAs/GaAs quantum dots (QDs) in the presence of an applied external magnetic field is presented. Attention is focused on the redistribution between the: spectral lines of a single QD observed at increasing magnetic field parallel to the growth direction (Faraday geometry). The redistribution effect is explained by considering the electron drift velocity in the QD plane that affects the probability for capture into the QD. In contrast, no redistribution is observed when applying the magnetic field perpendicular to the growth direction (Voigt geometry).

引用

页数：7

共 43 条

[1] Temporal dynamics of a magnetoexciton in a quantum well [J].

Aksenov, I ;

Aoyagi, Y ;

Kusano, J ;

Sugano, T ;

Yasuda, T ;

Segawa, Y .

PHYSICAL REVIEW B, 1995, 52 (24) :17430-17434

[2] Optical spectroscopy of charged excitons in single quantum dot photodiodes [J].

Baier, M ;

Findeis, F ;

Zrenner, A ;

Bichler, M ;

Abstreiter, G .

PHYSICAL REVIEW B, 2001, 64 (19)

[3] Fine structure of neutral and charged excitons in self-assembled In(Ga)As/(Al)GaAs quantum dots -: art. no. 195315 [J].

Bayer, M ;

Ortner, G ;

Stern, O ;

Kuther, A ;

Gorbunov, AA ;

Forchel, A ;

Hawrylak, P ;

Fafard, S ;

Hinzer, K ;

Reinecke, TL ;

Walck, SN ;

Reithmaier, JP ;

Klopf, F ;

Schäfer, F .

PHYSICAL REVIEW B, 2002, 65 (19) :1953151-19531523

[4]

Bimberg D., 1999, QUANTUM DOT HETEROST

[5] Optical pumping of the electronic and nuclear spin of single charge-tunable quantum dots [J].

Bracker, AS ;

Stinaff, EA ;

Gammon, D ;

Ware, ME ;

Tischler, JG ;

Shabaev, A ;

Efros, AL ;

Park, D ;

Gershoni, D ;

Korenev, VL ;

Merkulov, IA .

PHYSICAL REVIEW LETTERS, 2005, 94 (04) :1-4

[6] Charging of embedded InAs self-assembled quantum dots by space-charge techniques [J].

Chang, WH ;

Chen, WY ;

Cheng, MC ;

Lai, CY ;

Hsu, TM ;

Yeh, NT ;

Chyi, JI .

PHYSICAL REVIEW B, 2001, 64 (12)

[7] Observation of built-in electric field in InP self-assembled quantum dot systems [J].

Davydov, V ;

Ignatiev, I ;

Ren, HW ;

Sugou, S ;

Masumoto, Y .

APPLIED PHYSICS LETTERS, 1999, 74 (20) :3002-3004

[8] Fine structure of charged and neutral excitons in InAs-Al0.6Ga0.4As quantum dots -: art. no. 153316 [J].

Finley, JJ ;

Mowbray, DJ ;

Skolnick, MS ;

Ashmore, AD ;

Baker, C ;

Monte, AFG ;

Hopkinson, M .

PHYSICAL REVIEW B, 2002, 66 (15) :1-4

[9] Single-hole spin relaxation in a quantum dot [J].

Flissikowski, T ;

Akimov, IA ;

Hundt, A ;

Henneberger, F .

PHYSICAL REVIEW B, 2003, 68 (16)

[10] Electric-field-dependent carrier capture and escape in self-assembled InAs/GaAs quantum dots [J].

Fry, PW ;

Finley, JJ ;

Wilson, LR ;

Lemaitre, A ;

Mowbray, DJ ;

Skolnick, MS ;

Hopkinson, M ;

Hill, G ;

Clark, JC .

APPLIED PHYSICS LETTERS, 2000, 77 (26) :4344-4346

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