Concentration quenching in Eu-doped ZnO grown by sputtering-assisted metalorganic chemical vapor deposition

被引：28

作者：

Tsuji, Takahiro ^{[1
]}

Terai, Yoshikazu ^{[1
]}

Bin Kamarudin, Muhammad Hakim ^{[1
]}

Yoshida, Kazuki ^{[1
]}

Fujiwara, Yasufumi ^{[1
]}

机构：

[1] Osaka Univ, Grad Sch Engn, Div Mat & Mfg Sci, Suita, Osaka 5650871, Japan

来源：

JOURNAL OF LUMINESCENCE | 2012年 / 132卷 / 12期

关键词：

Rare-earth doped semiconductors; MOCVD; ZnO; Eu; Photoluminescence; Lifetime; ENERGY-TRANSFER; FILMS; ELECTROLUMINESCENT; SEMICONDUCTORS; NANOCRYSTALS; LUMINESCENCE;

D O I：

10.1016/j.jlumin.2011.12.042

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

The dependence of Eu3+ photoluminescence (FL) properties on Eu concentration was studied in Eu-doped ZnO (ZnO:Eu) thin films grown by sputtering-assisted metalorganic chemical vapor deposition (SA-MOCVD). The ZnO:Eu showed band-edge PL from ZnO and red emission lines due to the intra-4f transitions in Eu3+ ions at room temperature (RT). The intensities of band-edge and Eu3+ PL decreased with the increasing Eu concentration. In the temperature dependence of Eu3+ PL, the ZnO:Eu with high Eu concentration showed large thermal quenching of the PL intensity. In addition, the lifetimes of Eu3+ PL became short at high Eu concentration. The concentration quenching mechanism of Eu3+ PL using a model based on non-radiative recombination processes in ZnO and Eu3+ ions was presented. (C) 2011 Elsevier B.V. All rights reserved.

引用

页码：3125 / 3128

页数：4

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