Well-ordered arranging of Ag nanoparticles in SiO2/Si by ion implantation

被引：3

作者：

Takahiro, K. ^{[1
]}

Minakuchi, Y. ^{[1
]}

Kawaguchi, K. ^{[1
]}

Isshiki, T. ^{[2
]}

Nishio, K. ^{[2
]}

Sasase, M. ^{[3
]}

Yamamoto, S. ^{[4
]}

Nishiyama, F. ^{[5
]}

机构：

[1] Kyoto Inst Technol, Dept Chem & Mat Technol, Sakyo Ku, Kyoto 6068585, Japan

[2] Kyoto Inst Technol, Dept Math & Phys Sci, Sakyo Ku, Kyoto 6068585, Japan

[3] Wakasa Wan Energy Res Ctr, Tsuruga, Fukui 9140192, Japan

[4] Japan Atom Energy Agcy, Quantum Beam Sci Directorate, Takasaki, Gunma 3701292, Japan

[5] Hiroshima Univ, Grad Sch Engn, Higashihiroshima, Hiroshima 7398527, Japan

来源：

APPLIED SURFACE SCIENCE | 2012年 / 258卷 / 19期

关键词：

Ion implantation; Nanoparticle; 2D array; Interface; delta-Layer; Oxidation; Sulfidation; SILVER NANOPARTICLES; SILICON; LAYER; THIN; AUGER; CLUSTERS; GROWTH; ATOMS; FILM;

D O I：

10.1016/j.apsusc.2012.04.001

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Well-ordered arrangements of Ag nanoparticles have been found for Ag-implanted SiO2 at depths corresponding to the projected range and end of range of Ag ions. Thermally grown SiO2 films of 300 nm thick on Si were implanted with 350 keV-Ag ions to fluences of 0.37-1.2 x 1017 ions/cm(2) at a current density about 4 mu A/cm(2). Cross-sectional transmission electron microscopy and scanning transmission electron microscopy reveal the presence of a two-dimensional array of Ag nanoparticles of 25-40 nm in diameter located at a depth of similar to 130 nm, together with the self-organization of delta-layer of tiny Ag nanoparticles aligned along the SiO2/Si interface. X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD) confirm the stability of these Ag nanoparticles against oxidation and sulfidation when stored in ambient air for 19-21 months. (C) 2012 Elsevier B.V. All rights reserved.

引用

页码：7322 / 7326

页数：5

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