Atomic layer deposition TiO2 coated porous silicon surface: Structural characterization and morphological features

被引：47

作者：

Iatsunskyi, Igor ^{[1
,2
]}

Jancelewicz, Mariusz ^{[1
]}

Nowaczyk, Grzegorz ^{[1
]}

Kempinski, Mateusz ^{[1
,3
]}

Peplinska, Barbara ^{[1
,4
]}

Jarek, Marcin ^{[1
]}

Zaleski, Karol ^{[1
]}

Jurga, Stefan ^{[1
,4
]}

Smyntyna, Valentyn ^{[2
]}

机构：

[1] Adam Mickiewicz Univ, NanoBioMed Ctr, PL-61614 Poznan, Poland

[2] Odessa Natl II Mechnikov Univ, Dept Expt Phys, UA-65023 Odessa, Ukraine

[3] Adam Mickiewicz Univ, Fac Phys, PL-61614 Poznan, Poland

[4] Adam Mickiewicz Univ, Dept Macromol Phys, PL-61614 Poznan, Poland

来源：

THIN SOLID FILMS | 2015年 / 589卷

关键词：

Atomic layer deposition; Titanium dioxide; Porous silicon; THIN-FILMS; ELECTRON-MICROSCOPY; TITANIUM-DIOXIDE; RAMAN-SCATTERING; BIOSENSOR; EVOLUTION; AL2O3;

D O I：

10.1016/j.tsf.2015.05.056

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

TiO2 thin films were grown on highly-doped p-Si (100) macro-and mesoporous structures by atomic layer deposition (ALD) using TiCl4 and deionized water as precursors at 300 degrees C. The crystalline structure, chemical composition, and morphology of the deposited films and initial silicon nanostructures were investigated by scanning electron microscopy, transmission electron microscopy (TEM), energy dispersive X-ray spectroscopy, X-ray photoelectron spectroscopy, micro-Raman spectroscopy and X-ray diffraction (XRD). The mean size of TiO2 crystallites was determined by TEM, XRD and Raman spectroscopy. It was shown that the mean crystallite size and the crystallinity of the TiO2 are influenced dramatically by the morphology of the porous silicon, with the mesoporous silicon resulting in a much finer grain size and amorphous structure than the macroporous silicon having a partially crystal anatase phase. A simple model of the ALD layer growth inside the pores was presented. (C) 2015 Elsevier B.V. All rights reserved.

引用

页码：303 / 308

页数：6

共 35 条

[1] MORPHOLOGY AND STRUCTURE OF TIO2 THIN-FILMS GROWN BY ATOMIC LAYER DEPOSITION [J].