Narrowband ultraviolet photodetector based on MgZnO and NPB heterojunction

被引：13

作者：

Hu, Zuofu ^{[1
]}

Li, Zhenjun ^{[1
]}

Zhu, Lu ^{[1
]}

Liu, Fengjuan ^{[1
]}

Lv, Yanwu ^{[1
]}

Zhang, Xiqing ^{[1
]}

Wang, Yongsheng ^{[1
]}

机构：

[1] Beijing Jiaotong Univ, Key Lab Luminescence & Opt Informat, Minist Educ, Inst Optoelect Technol, Beijing 100044, Peoples R China

来源：

OPTICS LETTERS | 2012年 / 37卷 / 15期

基金：

中国国家自然科学基金;

关键词：

MGXZN1-XO; DEVICES; ALLOY; FILMS;

D O I：

10.1364/OL.37.003072

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

An ultraviolet photodetector was fabricated based on Mg0.07Zn0.93O heterojunction. N,N'-bis (naphthalen-1-y1)-N, N'-bis(pheny) benzidine was selected as the hole transporting layer. I-V characteristic curves of the device were measured in the dark and under the illumination of 340 nm UV light with density of 1.33 mW/cm(2). The device showed a low dark current of about 3 x 10(-10) A and a high photo-dark current ratio of 1 x 10(5) at -2 V bias. A narrow-band photoresponse was observed from 300 to 400 nm and centered at 340 nm with a full width at half-maximum of only 30 nm. The maximum peak response is at 340 nm, which is 0.192 A /W at the bias of -1 V. (C) 2012 Optical Society of America

引用

页码：3072 / 3074

页数：3

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