Packaged CMOS-MEMS free-free beam oscillator

被引：11

作者：

Marigo, E. ^{[1
]}

Verd, J. ^{[2
]}

Lopez, J. L. ^{[1
]}

Uranga, A. ^{[1
]}

Barniol, N. ^{[1
]}

机构：

[1] Univ Autonoma Barcelona, Dept Elect Engn, E-08193 Bellaterra, Spain

[2] Univ Illes Balears, Elect Syst Grp, E-07122 Palma De Mallorca, Spain

来源：

JOURNAL OF MICROMECHANICS AND MICROENGINEERING | 2013年 / 23卷 / 11期

关键词：

D O I：

10.1088/0960-1317/23/11/115018

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper a self-oscillator based on a polysilicon free-free beam resonator monolithically integrated and packaged in a 0.35 mu m complementary metal-oxide-semiconductor (CMOS) technology is presented. The oscillator is capable of providing a 350 mV(PP) sinusoidal signal at 25.6 MHz, with a bias polarization voltage of 7 V. The microelectromechanical systems (MEMS) resonator is packaged using only the back-end-of-line metal layers of the CMOS technology, providing a complete low-cost CMOS-MEMS processing for on-chip frequency references.

引用

页数：10

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