On the Importance of the Polarity for GaN/InGaN Last Quantum Barriers in III-Nitride-Based Light-Emitting Diodes

被引:19
作者
Zhang, Zi-Hui [1 ,2 ]
Zhang, Yonghui [1 ,2 ]
Li, Hongjian [3 ]
Xu, Shu [1 ,2 ]
Geng, Chong [1 ,2 ]
Bi, Wengang [1 ,2 ]
机构
[1] Hebei Univ Technol, Inst Micronano Photoelect & Electromagnet Technol, Sch Elect & Informat Engn, Tianjin 300401, Peoples R China
[2] Hebei Univ Technol, Key Lab Elect Mat & Devices Tianjin, Tianjin 300401, Peoples R China
[3] Univ Calif Santa Barbara, Dept Mat Sci & Engn, Santa Barbara, CA 93106 USA
来源
IEEE PHOTONICS JOURNAL | 2016年 / 8卷 / 06期
基金
中国国家自然科学基金;
关键词
Polarization inversion; electron injection efficiency; quantum efficiency; light-emitting diode (LED);
D O I
10.1109/JPHOT.2016.2628205
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this paper, we investigate the electron injection efficiency in terms of different polarities and different polarization charge densities at the GaN/InGaN interface. We find that the growth orientation for the GaN/InGaN-type last quantum barrier is essentially vital, i.e., the GaN/InGaN-type last quantum barrier is not able to effectively reduce the electron leakage and will degrade the light-emitting diode (LED) performance when the GaN/InGaN interface is [000-1] polarized. However, a suppressed electron leakage and enhanced optical power can be obtained for III-nitride LEDs grown along the [0001] orientation when the GaN/InGaN interface possesses polarization-induced negative charges. We conclude that the polarization-induced negative charges at the [0001] oriented GaN/InGaN interface facilitate the surface depletion in the GaN region, i.e., the conduction band of the GaN region is bent in the way of favoring electron depletion and contributes to an enhanced conduction band barrier height for electrons.
引用
收藏
页数:7
相关论文
共 25 条
[1]   Suppression of electron overflow and efficiency droop in N-polar GaN green light emitting diodes [J].
Akyol, F. ;
Nath, D. N. ;
Krishnamoorthy, S. ;
Park, P. S. ;
Rajan, S. .
APPLIED PHYSICS LETTERS, 2012, 100 (11)
[2]   Advantages of blue InGaN light-emitting diodes with AlGaN barriers [J].
Chang, Jih-Yuan ;
Tsai, Miao-Chan ;
Kuo, Yen-Kuang .
OPTICS LETTERS, 2010, 35 (09) :1368-1370
[3]   Evidence for nonlinear macroscopic polarization in III-V nitride alloy heterostructures [J].
Fiorentini, V ;
Bernardini, F ;
Ambacher, O .
APPLIED PHYSICS LETTERS, 2002, 80 (07) :1204-1206
[4]   Advances of AlGaN-based High-Efficiency Deep-UV LEDs [J].
Hirayama, Hideki .
OPTOELECTRONIC MATERIALS AND DEVICES V, 2011, 7987
[5]   Ultraviolet light-emitting diodes based on group three nitrides [J].
Khan, Asif ;
Balakrishnan, Krishnan ;
Katona, Tom .
NATURE PHOTONICS, 2008, 2 (02) :77-84
[6]   Improvement of quantum efficiency by employing active-layer-friendly lattice-matched InAlN electron blocking layer in green light-emitting diodes [J].
Kim, Hee Jin ;
Choi, Suk ;
Kim, Seong-Soo ;
Ryou, Jae-Hyun ;
Yoder, P. Douglas ;
Dupuis, Russell D. ;
Fischer, Alec M. ;
Sun, Kewei ;
Ponce, Fernando A. .
APPLIED PHYSICS LETTERS, 2010, 96 (10)
[7]   Origin of efficiency droop in GaN-based light-emitting diodes [J].
Kim, Min-Ho ;
Schubert, Martin F. ;
Dai, Qi ;
Kim, Jong Kyu ;
Schubert, E. Fred ;
Piprek, Joachim ;
Park, Yongjo .
APPLIED PHYSICS LETTERS, 2007, 91 (18)
[8]  
Kuo Y., 2011, PHOTONICS TECHNOLOGY, V23, P1630
[9]   Simultaneous enhancement of electron overflow reduction and hole injection promotion by tailoring the last quantum barrier in InGaN/GaN light-emitting diodes [J].
Kyaw, Zabu ;
Zhang, Zi-Hui ;
Liu, Wei ;
Tan, Swee Tiam ;
Ju, Zhen Gang ;
Zhang, Xue Liang ;
Ji, Yun ;
Hasanov, Namig ;
Zhu, Binbin ;
Lu, Shunpeng ;
Zhang, Yiping ;
Teng, Jing Hua ;
Wei, Sun Xiao ;
Demir, Hilmi Volkan .
APPLIED PHYSICS LETTERS, 2014, 104 (16)
[10]   Improved quantum efficiency in InGaN light emitting diodes with multi-double-heterostructure active regions [J].
Li, X. ;
Okur, S. ;
Zhang, F. ;
Hafiz, S. A. ;
Avrutin, V. ;
Ozgur, U. ;
Morkoc, H. ;
Jarasiunas, K. .
APPLIED PHYSICS LETTERS, 2012, 101 (04)