Quantum Dot Light-Emitting Diode with Quantum Dots Inside the Hole Transporting Layers

被引:39
作者
Leck, Kheng Swee [1 ]
Divayana, Yoga [1 ,3 ]
Zhao, Dewei [1 ]
Yang, Xuyong [1 ]
Abiyasa, Agus Putu [1 ]
Mutlugun, Evren [1 ,4 ]
Gao, Yuan [1 ]
Liu, Shuwei [1 ]
Tan, Swee Tiam [1 ]
Sun, Xiao Wei [1 ,5 ]
Demir, Hilmi Volkan [1 ,2 ,4 ]
机构
[1] Nanyang Technol Univ, Sch Elect & Elect Engn, LUMINOUS Ctr Excellence Semicond Lighting & Displ, Singapore 639798, Singapore
[2] Nanyang Technol Univ, Sch Phys & Math Sci, Singapore 639798, Singapore
[3] Udayana Univ, Sch Elect Engn, Bali, Indonesia
[4] Bilkent Univ, UNAM, Inst Mat Sci & Nanotechnol, Dept Elect & Elect Engn,Dept Phys, TR-06800 Ankara, Turkey
[5] South Univ Sci & Technol China, Shenzhen 518055, Guangdong, Peoples R China
基金
新加坡国家研究基金会;
关键词
quantum dots; hybrid OLEDs; exciton; electroluminescence; hole transport layer; noninverted structure; THIN-FILM; BRIGHT; NANOCRYSTALS; PERFORMANCE; TRANSISTORS; EFFICIENCY; DISPLAYS;
D O I
10.1021/am400903c
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
We report a hybrid, quantum dot (QD)-based, organic light-emitting diode architecture using a noninverted structure with the QDs sandwiched between hole transporting layers (HTLs) outperforming the reference device structure implemented in conventional noninverted architecture by over five folds and suppressing the blue emission that is otherwise observed in the conventional structure because of the excess electrons leaking towards the HTL. It is predicted in the new device structure that 97.44% of the exciton formation takes place in the QD layer, while 2.56% of the excitons form in the HTL. It is found that the enhancement in the external quantum efficiency is mainly due to the stronger confinement of exciton formation to the QDs.
引用
收藏
页码:6535 / 6540
页数:6
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