Complementary Logic Gate Arrays Based on Carbon Nanotube Network Transistors

被引：24
作者：
Gao, Pingqi [1 ]
Zou, Jianping [1 ]
Li, Hong [1 ]
Zhang, Kang [1 ]
Zhang, Qing [1 ]
机构：
[1] Nanyang Technol Univ, Sch Elect & Elect Engn, NOVITAS, Nanoelect Ctr Excellence, Singapore 639798, Singapore
来源：
SMALL | 2013年 / 9卷 / 06期
关键词：
carbon nanotubes; transistors; logic gates; arrays; FIELD-EFFECT TRANSISTORS; THIN-FILM TRANSISTORS; HIGH-PERFORMANCE ELECTRONICS; P-N DIODES; INTEGRATED-CIRCUITS; LOW-VOLTAGE;
D O I：
10.1002/smll.201201237
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
An efficient technique of fabricating high performance n- and p- type single-walled carbon nanotube (SWNT) network field-effect transistors (NET-FETs) is successfully demonstrated. Complementary inverters, NOR, NAND, OR, AND logic gates have been achieved from integrating these p- and n-type SWNT-NET-FETs. The processing technique described here is fully compatible with conventional silicon microelectronic technologies and it is readily suitable for scalable integration. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
引用
收藏
页码：813 / 819
页数：7
相关论文
共 32 条
[11]   High-field quasiballistic transport in short carbon nanotubes [J].
Javey, A ;
Guo, J ;
Paulsson, M ;
Wang, Q ;
Mann, D ;
Lundstrom, M ;
Dai, HJ .
PHYSICAL REVIEW LETTERS, 2004, 92 (10) :106804-1
[12]   Ballistic carbon nanotube field-effect transistors [J].
Javey, A ;
Guo, J ;
Wang, Q ;
Lundstrom, M ;
Dai, HJ .
NATURE, 2003, 424 (6949) :654-657
[13]   High-performance electronics using dense, perfectly aligned arrays of single-walled carbon nanotubes [J].
Kang, Seong Jun ;
Kocabas, Coskun ;
Ozel, Taner ;
Shim, Moonsub ;
Pimparkar, Ninad ;
Alam, Muhammad A. ;
Rotkin, Slava V. ;
Rogers, John A. .
NATURE NANOTECHNOLOGY, 2007, 2 (04) :230-236
[14]   Ambipolar to Unipolar Conversion in Graphene Field-Effect Transistors [J].
Li, Hong ;
Zhang, Qing ;
Liu, Chao ;
Xu, Shouheng ;
Gao, Pingqi .
ACS NANO, 2011, 5 (04) :3198-3203
[15]   Global and local charge trapping in carbon nanotube field-effect transistors [J].
Li, Hong ;
Zhang, Qing ;
Marzari, Nicola .
NANOTECHNOLOGY, 2008, 19 (17)
[16]   Ambipolar electrical transport in semiconducting single-wall carbon nanotubes [J].
Martel, R ;
Derycke, V ;
Lavoie, C ;
Appenzeller, J ;
Chan, KK ;
Tersoff, J ;
Avouris, P .
PHYSICAL REVIEW LETTERS, 2001, 87 (25) :256805-1
[17]   Medium Scale Integrated Circuits Using Carbon Nanotube Thin Film Transistors [J].
Mizutani, Takashi ;
Okigawa, Yuki ;
Ono, Yuki ;
Kishimoto, Shigeru ;
Ohno, Yutaka .
APPLIED PHYSICS EXPRESS, 2010, 3 (11)
[18]   Change in carrier type in high-k gate carbon nanotube field-effect transistors by interface fixed charges [J].
Moriyama, N. ;
Ohno, Y. ;
Kitamura, T. ;
Kishimoto, S. ;
Mizutani, T. .
NANOTECHNOLOGY, 2010, 21 (16)
[19]   High-Performance Top-Gate Carbon Nanotube Field-Effect Transistors and Complementary Metal-Oxide-Semiconductor Inverters Realized by Controlling Interface Charges [J].
Moriyama, Naoki ;
Ohno, Yutaka ;
Suzuki, Kosuke ;
Kishimoto, Shigeru ;
Mizutani, Takashi .
APPLIED PHYSICS EXPRESS, 2010, 3 (10)
[20]   n-Type carbon nanotube field-effect transistors fabricated by using Ca contact electrodes -: art. no. 073105 [J].
Nosho, Y ;
Ohno, Y ;
Kishimoto, S ;
Mizutani, T .
APPLIED PHYSICS LETTERS, 2005, 86 (07) :1-3
1234