Complementary Logic Gate Arrays Based on Carbon Nanotube Network Transistors

被引：24

作者：

Gao, Pingqi ^{[1
]}

Zou, Jianping ^{[1
]}

Li, Hong ^{[1
]}

Zhang, Kang ^{[1
]}

Zhang, Qing ^{[1
]}

机构：

[1] Nanyang Technol Univ, Sch Elect & Elect Engn, NOVITAS, Nanoelect Ctr Excellence, Singapore 639798, Singapore

来源：

SMALL | 2013年 / 9卷 / 06期

关键词：

carbon nanotubes; transistors; logic gates; arrays; FIELD-EFFECT TRANSISTORS; THIN-FILM TRANSISTORS; HIGH-PERFORMANCE ELECTRONICS; P-N DIODES; INTEGRATED-CIRCUITS; LOW-VOLTAGE;

D O I：

10.1002/smll.201201237

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

An efficient technique of fabricating high performance n- and p- type single-walled carbon nanotube (SWNT) network field-effect transistors (NET-FETs) is successfully demonstrated. Complementary inverters, NOR, NAND, OR, AND logic gates have been achieved from integrating these p- and n-type SWNT-NET-FETs. The processing technique described here is fully compatible with conventional silicon microelectronic technologies and it is readily suitable for scalable integration. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：813 / 819

页数：7

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