Influence of ion irradiation damage on properties of porous silicon

被引：11

作者：

Bao, XM ^{[1
]}

Yang, HQ ^{[1
]}

Yan, F ^{[1
]}

机构：

[1] NANJING UNIV,NATL LAB SOLID STATE MICROSTRUCT,NANJING 210093,PEOPLES R CHINA

来源：

JOURNAL OF APPLIED PHYSICS | 1996年 / 79卷 / 03期

关键词：

D O I：

10.1063/1.361028

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have studied the effect of ion-irradiation on porous Si formation, microstructure, and optical properties. Porous Si was first self-implanted and then fabricated by anodization. With increasing implantation dose, the photoluminescence (PL) intensity decreased, and the PL spectra were also red shifted. Porous Si formed from crystal Si emitted light, while that from preamorphized Si did not. Porous Si luminescent patterns with a resolution of 2 mu m features were formed by selective ion implantation. (C) 1996 American Institute of Physics.

引用

页码：1320 / 1323

页数：4

共 10 条

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