3-10 GHz self-biased resistive-feedback LNA with inductive source degeneration

被引：29

作者：

Feng, C. ^{[1
]}

Yu, X. P. ^{[1
]}

Lu, Z. H. ^{[2
]}

Lim, W. M. ^{[2
]}

Sui, W. Q. ^{[1
]}

机构：

[1] Zhejiang Univ, Hangzhou 310027, Peoples R China

[2] Nanyang Technol Univ, Singapore 639798, Singapore

来源：

ELECTRONICS LETTERS | 2013年 / 49卷 / 06期

基金：

美国国家科学基金会;

关键词：

AMPLIFIER;

D O I：

10.1049/el.2012.4472

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A 3-10 GHz self-biased low-noise amplifier (LNA) implemented in Global Foundries 65 nm CMOS process is presented. A novel input-matching network employing the resistive feedback and inductive source degeneration techniques is proposed to achieve the wideband matching as well as low noise figure. The LNA exhibits a power gain of 17 +/- 1 dB over 3-10 GHz with noise figure ranging from 3.5 to 4.3 dB. The fabricated LNA occupies an area of 0.15 mm(2) and draws 12 mA from 1.2 V power supply.

引用

页码：387 / 388

页数：2

共 5 条

[1] 6-10 GHz ultra-wideband CMOS LNA [J].