Optical switching and related structural properties of epitaxial Ge2Sb2Te5 films

被引：6

作者：

Gericke, F. ^{[1
]}

Flissikowski, T. ^{[1
]}

Laehnemann, J. ^{[1
]}

Katmis, F. ^{[1
]}

Braun, W. ^{[1
]}

Riechert, H. ^{[1
]}

Grahn, T. ^{[1
]}

机构：

[1] Paul Drude Inst Festkorperelekt, D-10117 Berlin, Germany

来源：

JOURNAL OF APPLIED PHYSICS | 2012年 / 111卷 / 11期

关键词：

D O I：

10.1063/1.4728221

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We investigate the optical switching process and the related structural properties of (GeTe)(Sb2Te3) epitaxial films close to Ge2Sb2Te5 composition on GaSb(001). While the amorphization process can take place in a single or in multiple steps, the re-crystallization process always takes place in multiple steps. Intermediate stages of the re-crystallization process are characterized by small crystalline islands within the amorphous area. The structural properties are investigated by optical microscopy and electron backscatter diffraction (EBSD) in a scanning electron microscope. The analysis of the EBSD pattern demonstrates that the crystalline islands at intermediate stages of the re-crystallization process exhibit different orientations. We conclude that the re-crystallization process is driven by nucleation without any orientation information from the substrate. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4728221]

引用

页数：4

共 10 条

[1]

Braun W., 2009, MAT PHYS NONVOLATILE, V1160, pH14

[2] Epitaxy of Ge-Sb-Te phase-change memory alloys [J].

Braun, Wolfgang ;

Shayduk, Roman ;

Flissikowski, Timur ;

Ramsteiner, Manfred ;

Grahn, Holger T. ;

Riechert, Henning ;

Fons, Paul ;

Kolobov, Alex .

APPLIED PHYSICS LETTERS, 2009, 94 (04)

[3] Photoassisted amorphization of the phase-change memory alloy Ge2Sb2Te5 [J].

Fons, P. ;

Osawa, H. ;

Kolobov, A. V. ;

Fukaya, T. ;

Suzuki, M. ;

Uruga, T. ;

Kawamura, N. ;

Tanida, H. ;

Tominaga, J. .

PHYSICAL REVIEW B, 2010, 82 (04)

[4] Fast phase transition process of Ge2Sb2Te5 film induced by picosecond laser pulses with identical fluences [J].

Huang, Huan ;

Zuo, Fangyuan ;

Zhai, Fengxiao ;

Wang, Yang ;

Lai, Tianshu ;

Wu, Yiqun ;

Gan, Fuxi .

JOURNAL OF APPLIED PHYSICS, 2009, 106 (06)

[5] Materials science - Who wins the nonvolatile memory race? [J].

Meijer, G. I. .

SCIENCE, 2008, 319 (5870) :1625-1626

[6] Crystal nucleation and growth processes in Ge2Sb2Te5 [J].

Privitera, S ;

Bongiorno, C ;

Rimini, E ;

Zonca, R .

APPLIED PHYSICS LETTERS, 2004, 84 (22) :4448-4450

[7] Nanosecond in situ transmission electron microscope studies of the reversible Ge2Sb2Te5 crystalline ↔ amorphous phase transformation [J].

Santala, M. K. ;

Reed, B. W. ;

Topuria, T. ;

Raoux, S. ;

Meister, S. ;

Cui, Y. ;

LaGrange, T. ;

Campbell, G. H. ;

Browning, N. D. .

JOURNAL OF APPLIED PHYSICS, 2012, 111 (02)

[8] Crystallization dynamics of nitrogen-doped Ge2Sb2Te5 [J].

Shelby, Robert M. ;

Raoux, Simone .

JOURNAL OF APPLIED PHYSICS, 2009, 105 (10)

[9] Reversible switching in phase-change materials [J].

Welnic, Wojciech ;

Wuttig, Matthias .

MATERIALS TODAY, 2008, 11 (06) :20-27

[10] Phase-change materials - Towards a universal memory? [J].

Wuttig, M .

NATURE MATERIALS, 2005, 4 (04) :265-266

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