GaN-based three-junction cascaded light-emitting diode with low-resistance InGaN tunnel junctions

被引：43

作者：

Akyol, Fatih ^{[1
]}

Krishnamoorthy, Sriram ^{[1
]}

Zhang, Yuewei ^{[1
]}

Rajan, Siddharth ^{[1
,2
]}

机构：

[1] Ohio State Univ, Dept Elect & Comp Engn, Columbus, OH 43210 USA

[2] Ohio State Univ, Dept Mat Sci & Engn, Columbus, OH 43210 USA

来源：

APPLIED PHYSICS EXPRESS | 2015年 / 8卷 / 08期

关键词：

Light - Semiconductor alloys - Gallium alloys - Indium alloys - III-V semiconductors - Tunnel junctions - Gallium nitride;

D O I：

10.7567/APEX.8.082103

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the cascading of blue light-emitting diodes (LEDs) up to three junctions using low-resistance InGaN tunnel junctions (TJs). At a forward current density of 10A/cm(2), triple- and dual-junction LEDs operated at 9.09 and 6.07 V with total differential resistances of 6.31 x 10(-2) and 4.16 x 10(-2) Omega cm(2), respectively. A significant increase in output power was observed from the triple-junction LED compared to the dual one, showing that all LED layers contribute to the luminescence output. Enabling high brightness at low current, cascaded LEDs can circumvent efficiency droop mechanism. (C) 2015 The Japan Society of Applied Physics

引用

页数：3

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