Determination of impurities in silicon nitride and silicon carbide by microwave digestion

被引:0
作者
Tanimoto, M
Fukumura, H
机构
关键词
microwave digestion; acid decomposition of silicon nitride and silicon carbide; determination of impurities in silicon nitride and silicon carbide;
D O I
暂无
中图分类号
O65 [分析化学];
学科分类号
070302 ; 081704 ;
摘要
Microwave digestion techniques were examined to determine impurities in silicon nitride and silicon carbide powders. Each sample was decomposed within two hours by the following procedures. A 0.5 g sample of silicon nitride powder and mixture of 9 ml of hydrofluoric acid and 3 ml of nitric acid were put into a Teflon pressure vessel with a polypropylene jacket, and then decomposed by heating in a microwave oven. Similarly an approximately 0.5 g sample of silicon carbide (beta-SIC) powder was decomposed with a mixture of 3 ml of hydrofluoric acid, 3 ml of nitric acid and 6 ml of sulfuric acid by heating in a microwave oven. alpha-SiC powder, however did not dissolve, while beta-SiC powder did. The proposed methods were applied to JCRM-R-005 and some commercial powders of silicon nitride and silicon carbide, and the impurities were determined by ICP-AES and AAS. Analytical results were compared with the results of conventional acid pressure decomposition method.
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页码:357 / 361
页数:5
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