Role of an order-disorder phase transition in increasing the exchange magnetic field in a diluted magnetic semiconductor -: art. no. 220402

被引:12
作者
Morón, MC
Hull, S
机构
[1] Univ Zaragoza, CSIC, Inst Ciencia Mat Aragon, E-50009 Zaragoza, Spain
[2] Rutherford Appleton Lab, ISIS Facil, Didcot OX11 0QX, Oxon, England
关键词
D O I
10.1103/PhysRevB.64.220402
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The controlled substitution of Mn by Zn within the diluted magnetic semiconductor Zn1-xMnxGa2Se4 (0 less than or equal tox less than or equal to1) series induces a pumping of magnetic ions from a defined site of the crystal lattice to another one driving the system to an order-disorder phase transition with x(c) = 0.50 +/- 0.01. A long-range order parameter, eta, is defined and directly determined as a function of x within the whole range of composition from neutron-diffraction experiments, An augmentation of the magnetic exchange field by increasing the magnetic dilution occurs as a consequence of that order-disorder process.
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页数:4
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