The influence of aluminum content on the surface morphology of heavily doped (Al)GaN mesastrip structures grown by selective metalorganic vapor phase epitaxy

被引：0

作者：

Lundin, W. V. ^{[1
,2
]}

Zavarin, E. E. ^{[1
,2
]}

Popov, M. G. ^{[1
,2
]}

Troshkov, S. I. ^{[2
]}

Sakharov, A. V. ^{[1
,2
]}

Smirnova, I. P. ^{[1
,2
]}

Kulagina, M. M. ^{[2
]}

Davydov, V. Yu. ^{[2
]}

Smirnov, A. N. ^{[2
]}

Tsatsulnikov, A. F. ^{[1
,2
]}

机构：

[1] Russian Acad Sci, Submicron Heterostruct Microelect Res & Engn Ctr, St Petersburg 194021, Russia

[2] Russian Acad Sci, Ioffe Phys Tech Inst, St Petersburg 194021, Russia

来源：

TECHNICAL PHYSICS LETTERS | 2015年 / 41卷 / 10期

基金：

俄罗斯基础研究基金会;

关键词：

MOVPE; GAS;

D O I：

10.1134/S1063785015100247

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Heavily Si-doped Al (x) Ga1-x N mesastrip structures were grown by selective MOVPE technology. Al (x) Ga1-x N:Si mesastructures with x similar to 0.01-0.07 possess a smoother top and more even side surfaces as compared to those in analogous GaN:Si structures. During the growth of mesastructures with x similar to 0.03-0.07, a thin nanocrystalline AlN deposit appears on the Si3N4 mask. This deposit is not formed during the growth of structures with sufficiently low aluminum content.

引用

页码：1006 / 1009

页数：4

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