Observation of repetitively nanosecond pulse-width transverse patterns in microchip self-Q-switched laser

Repetitively nanosecond pulse-width transverse pattern formation in a plane-parallel microchip Cr,Nd: yttrium-aluminum-garnet (YAG) self-Q-switched laser was investigated. The complex point-symmetric transverse patterns were observed by varying the pump beam diameter incident on the Cr,Nd:YAG crystal. The gain guiding effect and the thermal effect induced by the pump power in microchip Cr,Nd:YAG laser control the oscillating transverse modes. These transverse pattern formations were due to the variation of the saturated inversion population and the thermal induced index profile along radial and longitudinal direction in the Cr,Nd:YAG crystal induced by the pump power incident on the Cr,Nd:YAG crystal. These were intrinsic properties of such a microchip self-Q-switched laser. The longitudinal distribution of the saturated inversion population inside the gain medium plays an important role on the transverse pattern formation. Different sets of the transverse patterns corresponds to the different saturated inversion population distribution inside microchip Cr,Nd:YAG crystal.