High performance RF power LDMOSFETs for cellular handsets formed in thick-strained-Si/relaxed-SiGe structure

被引：0

作者：

Kondo, M ^{[1
]}

Sugii, N ^{[1
]}

Hoshino, Y ^{[1
]}

Hirasawa, W ^{[1
]}

Kimura, Y ^{[1
]}

Miyamoto, M ^{[1
]}

Fujioka, T ^{[1
]}

Kamohara, S ^{[1
]}

Kondo, Y ^{[1
]}

Kimura, S ^{[1
]}

Yoshida, I ^{[1
]}

机构：

[1] Renesas Technol Corp, Adv Analog Technol Div, Takasaki, Gumma 3700021, Japan

来源：

IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2005, TECHNICAL DIGEST | 2005年

关键词：

D O I：

暂无

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

We applied a strained-Si/relaxed-SiGe structure to LDMOSFETs in order to improve the power-added efficiency (PAE) of cellular handset RF power amplifier applications. Our LDMOSFETs were fabricated in a 70-nm-thick strained-Si/relaxed Si(0.85)Ge(0.15) structure. Despite of appearance of misfit dislocations, the thick strained-Si was essential for the high efficiency and low leakage. The self-heating effects on the power performance were estimated to be negligible by using a dynamic thermal simulation. The devices exhibited 46.7%-PAE at 27.5 dBm-P(out) for WCDMA handset applications, which was improved by 4.0 point over Si controls.

引用

页码：377 / 380

页数：4