Effects of Si doping on phase transition of Ge2Sb2Te5 films by in situ resistance measurements

被引：37

作者：

Ling, Yun ^{[1
]}

Lin, Yinyin

Qiao, Baowei

Lai, Yunfeng

Feng, Jie

Tang, Tingao

Cai, Bingchu

Chen, Bomy

机构：

[1] Fudan Univ, ASIC, Dept Microelect, Shanghai 200433, Peoples R China

[2] Fudan Univ, Syst State Key Lab, Shanghai 200433, Peoples R China

[3] Shanghai Jiao Tong Univ, Res Inst Micro Nanometer Technol, Shanghai 200030, Peoples R China

[4] Silicon Storage Technol Inc, Sunnyvale, CA 94086 USA

[5] Jiangsu Univ, Dept Mat Sci & Engn, Jiangsu 212013, Peoples R China

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2006年 / 45卷 / 12-16期

关键词：

Ge2Sb2Te5; doping; activation energy; phase transition; electrical measurements;

D O I：

10.1143/JJAP.45.L349

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The amorphous-to-crystal transition has been Studied by in-situ resistance measurements for Ge2Sb2Te5 (GST) thin films doped with silicon (Si) or nitrogen (N). It was found that the electrical properties and thermal stability of GST films can be improved by doping small amount of Si in the GST film. In comparison with Si doping, the N doping effects have also been studied and it was revealed that both the Si- and N-doping can increase the electrical conduction activation energy and enhance thermal stability of amorphous GST.

引用

页码：L349 / L351

页数：3

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