Photoluminescence property of InGaN single quantum well with embedded AlGaN δ layer

被引：19

作者：

Park, Jongwoon ^{[1
]}

Kawakami, Yoichi ^{[1
]}

机构：

[1] Kyoto Univ, Dept Elect Sci & Engn, Nishigyo Ku, Kyoto 6158510, Japan

来源：

APPLIED PHYSICS LETTERS | 2006年 / 88卷 / 20期

关键词：

D O I：

10.1063/1.2205731

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We investigate the photoluminescence (PL) properties of a thick InGaN single quantum well (SQW) in which an AlGaN delta layer is embedded. The delta layer offers an extra degree of freedom which may be employed to tune the emission wavelength. One of the most salient features of such a QW structure is that the long-wavelength tuning is feasible with lower indium composition. The delta layer also increases the wave function overlap between holes and electrons, shortening the PL lifetime. All the measurement results are consistent with the numerical predictions. The QW structure could be of great importance in the design of long-wavelength lasers. (c) 2006 American Institute of Physics.

引用

页数：3

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