Effect of a Second-Order Phase Transition on the Electrical Conductivity of Metal/Semiconductor Structures

被引：1

作者：

Nabiullin, I. R. ^{[1
]}

Gadiev, R. M. ^{[1
]}

Lachinov, A. N. ^{[2
]}

机构：

[1] M Akmulla Bashkir State Pedag Univ, Ufa 450000, Russia

[2] Russian Acad Sci, Ufa Sci Ctr, Inst Phys Mol & Crystals, Ufa 450054, Russia

来源：

SEMICONDUCTORS | 2019年 / 53卷 / 04期

关键词：

D O I：

10.1134/S1063782619040201

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The properties of the Cr-p-Si potential barrier near the temperature of the antiferromagnetic-paramagnetic phase transition in chromium are investigated. A significant change in the potential barrier and an anomalous increase in the conductivity in the Cr-p-Si-Au structure are observed near the temperature of the second-order antiferromagnetic-paramagnetic phase transition in chromium. It is established that current fluctuations in the structure are enhanced when approaching the phase-transition point. The experimental results are interpreted based on the assumption that the observed change in the electron-transport properties of the Cr-Si interface is due to a shift of the Fermi quasi-level in chromium as a result of the second-order phase transition.

引用

页码：439 / 441

页数：3