Photoluminescence analysis of electron irradiation-induced defects in GaAs/Ge space solar cells

被引：15

作者：

Ming, Lu ^{[1
]}

Rong, Wang ^{[1
]}

Kui, Yang ^{[1
]}

Yi Tiancheng ^{[1
]}

机构：

[1] Beijing Normal Univ, Coll Nucl Sci & Technol, Key Lab Beam Technol & Mat Modificat, Beijing Radiat Ctr,Minist Educ, Beijing 100875, Peoples R China

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2013年 / 312卷

基金：

中国国家自然科学基金;

关键词：

GaAs/Ge solar cells; Photoluminescence; Electron irradiation; INDUCED DEGRADATION; PREDICTION;

D O I：

10.1016/j.nimb.2013.07.006

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Photoluminescence measurements were carried out to investigate the degradation for GaAs/Ge space solar cells which were irradiated with 1.0, 1.8, and 11.5 MeV electrons with fluences up to 3 x 10(15) cm(-2). The product of the defect introduction rate and the minority carrier capture cross section by electron irradiation-induced defects was determined with photoluminescence radiative efficiency related to the non-radiative recombination lifetime. Then the cross section was acquired according to the relation between the defect introduction rate and the non-ionizing energy loss. Furthermore, the non-radiative recombination could be identified among all the detected defects by comparing the cross section of the minority carrier capture. (C) 2013 Published by Elsevier B.V.

引用

页码：137 / 140

页数：4

共 14 条

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