Large magnetoresistance (>600%) of a GaAs:MnAs granular thin film at room temperature

被引：30

作者：

Yokoyama, M

Ogawa, T

Nazmul, AM

Tanaka, M

机构：

[1] Univ Tokyo, Dept Elect Engn, Bunkyo Ku, Tokyo 1138656, Japan

[2] Japan Sci & Technol Agcy, Kawaguchi, Saitama 3320012, Japan

[3] Tohoku Univ, Dept Elect Engn, Aoba Ku, Sendai, Miyagi 9808579, Japan

来源：

JOURNAL OF APPLIED PHYSICS | 2006年 / 99卷 / 08期

关键词：

D O I：

10.1063/1.2151817

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A large positive magnetoresistance (MR) at room temperature was observed in a GaAs:MnAs granular thin film, in which MnAs nanoclusters were embedded in a GaAs matrix. Current-voltage characteristics and a MR effect of the GaAs:MnAs thin film were measured by a two-point-probe method. The MR ratio of the GaAs:MnAs granular thin film reached more than 600%, when a bias voltage of 110 V was applied to the film. (C) 2006 American Institute of Physics.

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