Linear X-ray detector array made on bulk CdZnTe for 30 similar to 100 keV energy

被引:4
作者
Yoo, SS [1 ]
Jennings, G [1 ]
Montano, PA [1 ]
机构
[1] ARGONNE NATL LAB,DIV MAT SCI,ARGONNE,IL 60439
关键词
CdTe; CdZnTe; gamma-ray detector; high pressure Bridgman; linear array; radiation detector; x-ray detector;
D O I
10.1007/s11664-997-0227-0
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A CdZnTe detector grown by the high pressure Bridgman (HPB) growth technique was tested using high energy x-rays (30 similar to 100 keV), and the performance was compared with a commercially available NaI scintillating detector of 5 cm thickness. The charge collection efficiency of a CdZnTe detector is as high as 90% at relatively low electric field, 600 V/cm. At high x-ray photon energies, the detection efficiency is reduced due to the thickness of the CdZnTe. A 32 channel linear array was fabricated on 1.2 similar to 1.7 mm thick CdZnTe, of which the detector area was 175 x 800 mu m(2) and the pitch size 250 mu m. The measured dark current for the 16 element detector was as low as 0.1 pA at 800 V/cm with an excellent uniformity. Energy spectra were measured using a Co-57 radiation source. A small pixel effect and charge sharing were observed. The energy resolution was improved and compared with the large area detector. The array detector gave an average 5.8% full-width-half-maximum (FWHM) at 122 keV photopeak. The large area detector of the same material before fabrication exhibited a low energy tail at the photopeak, which limits the photopeak FWHM to 8%.
引用
收藏
页码:750 / 755
页数:6
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