Inversion of wurtzite GaN(0001) by exposure to magnesium

被引：185

作者：

Ramachandran, V ^{[1
]}

Feenstra, RM

Sarney, WL

Salamanca-Riba, L

Northrup, JE

Romano, LT

Greve, DW

机构：

[1] Carnegie Mellon Univ, Dept Phys, Pittsburgh, PA 15213 USA

[2] Univ Maryland, Dept Mat & Nucl Engn, College Pk, MD 20742 USA

[3] Xerox Corp, Palo Alto Res Ctr, Palo Alto, CA 94304 USA

[4] Carnegie Mellon Univ, Dept Elect & Comp Engn, Pittsburgh, PA 15213 USA

来源：

APPLIED PHYSICS LETTERS | 1999年 / 75卷 / 06期

关键词：

D O I：

10.1063/1.124520

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Magnesium incorporation during the molecular-beam epitaxy growth of wurtzite GaN is found to invert the Ga-polar (0001) face to the N-polar face. The polarity is identified based on the two different sets of reconstructions seen on the film prior to and after about 1 monolayer Mg exposure. The inversion boundary is seen to lie on the (0001) plane from transmission electron microscopy images, and a structural model is presented for the inversion. On the Ga-polar face, Mg is also seen to stabilize growth in the N-rich regime. (C) 1999 American Institute of Physics. [S0003-6951(99)04132-7].

引用

页码：808 / 810

页数：3

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