A Cavity-Enhanced Room-Temperature Broadband Raman Memory

被引：0

作者：

Ledingham, P. M. ^{[1
]}

Munns, J. H. D. ^{[1
,2
]}

Thomas, S. E. ^{[1
,2
]}

Champion, T. F. M. ^{[1
]}

Qiu, C. ^{[1
,3
]}

Kaczmarek, K. T. ^{[1
]}

Feizpour, A. ^{[1
]}

Poem, E. ^{[1
]}

Walmsley, I. A. ^{[1
]}

Nunn, J. ^{[1
]}

Saunders, D. J. ^{[1
]}

机构：

[1] Univ Oxford, Clarendon Lab, Parks Rd, Oxford OX1 3PU, England

[2] Imperial Coll London, Blackett Laborotoly, QOLS, London SW7 2BW, England

[3] East China Normal Univ, Quantum Inst Light & Atoms, Dept Phys, State Key Lab Precis Spectros, Shanghai 200062, Peoples R China

来源：

2016 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO) | 2016年

关键词：

VAPOR;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Quantum memories enable the synchronisation of photonic operations. Raman memories are a promising platform, but are susceptible to four-wave mixing noise. We present a demonstration of a cavity-enhanced Raman memory, showing suppression of four-wave mixing.

引用

页数：2

共 6 条

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