InAs/InGaAs/InAlAs interband quantum well infrared photodetector (IQWIP) with cut-off response wavelength at 1.93 μm

被引：13
作者：
Liu, Jie [1 ,2 ]
Lu, Jinlei [1 ,2 ]
Yue, Chen [1 ,2 ]
Li, Xuanzhang [1 ,2 ]
Chen, Hong [1 ]
Wang, Lu [1 ]
机构：
[1] Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Key Lab Renewable Energy,Beijing Key Lab New Ener, Beijing 100190, Peoples R China
[2] Univ Chinese Acad Sci, Beijing 100049, Peoples R China
来源：
APPLIED PHYSICS EXPRESS | 2019年 / 12卷 / 03期
基金：
中国国家自然科学基金;
关键词：
SUPERLATTICE;
D O I：
10.7567/1882-0786/ab017f
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Utilizing the high efficiency of the localized carrier extraction in the low-dimensional semiconductors within a PN junction, an InP-based InAs/InGaAs/InAlAs interband quantum well infrared photodetector has been investigated. Although the thermal energy is much less than the band offset, the detector still realizes photo response up to 1.93 mu m. In addition, the detector shows the room-temperature external quantum efficiency of 7% and detectivity of 1.81 x 10(10) cm root HZ/W without anti-reflection layer. Based on the above quantum efficiency value, an absorption coefficient of 1.1 x 10(4) cm(-1) was also determined. It is clear that our work provides compelling evidences for the possibility of novel and low-cost infrared photodetector. (C) 2019 The Japan Society of Applied Physics
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页数：5
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