3D Nanostructuring of hydrogen silsesquioxane resist by 100 keV electron beam lithography

被引：19

作者：

Vila-Comamala, Joan ^{[1
]}

Gorelick, Sergey ^{[1
]}

Guzenko, Vitaliy A. ^{[1
]}

David, Christian ^{[1
]}

机构：

[1] Paul Scherrer Inst, CH-5232 Villigen, Switzerland

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2011年 / 29卷 / 06期

关键词：

STAIRCASE PROFILES; FABRICATION;

D O I：

10.1116/1.3629811

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The authors investigated the three-dimensional nanostructuring of hydrogen silsesquioxane (HSQ) resist by multiple-step 100 keV electron beam lithography. Consecutive overlay exposures were used to create two- and three-levels in high aspect ratio HSQ structures with lateral dimensions down to 30 nm and resist thicknesses of about 1 mu m. The HSQ resist was developed by a high contrast solution and supercritically dried in a carbon dioxide environment after each exposure step. The three-dimensional HSQ patterning has potential applications in the fabrication of performance enhanced devices such as photonic crystals, nanoelectromechanical systems, and diffractive X-ray lenses. (C) 2011 American Vacuum Society. [DOI: 10.1116/1.3629811]

引用

页数：5

共 19 条

[1] Ultra-dense hydrogen silsesquioxane (HSQ) structures on thin silicon nitride membranes [J].