Origin of Projected Excellent Thermoelectric Transport Properties in d0-Electron AMN2 (A = Sr or Ba; M = Ti, Zr, Hf) Layered Complex Metal Nitrides

被引:12
作者
Ohkubo, Isao [1 ]
Mori, Takao [1 ]
机构
[1] Natl Inst Mat Sci, WPI Res Ctr, Int Ctr Mat Nanoarchitecton MANA, Tsukuba, Ibaraki 3050044, Japan
关键词
Layered compounds; Thermoelectric materials; Nitrides; Electronic structure; Ab initio calculations; THERMAL-CONDUCTIVITY; ELECTRONIC-STRUCTURE; TERNARY NITRIDE; THERMOPHYSICAL PROPERTIES; CRYSTAL-CHEMISTRY; SRTIO3; THERMOPOWER; PERFORMANCE; SRZRN2; OXIDES;
D O I
10.1002/ejic.201500350
中图分类号
O61 [无机化学];
学科分类号
070301 ; 081704 ;
摘要
Layered materials have several properties that make them suitable as high-performance thermoelectric materials. In this study, we elucidated the potential of d(0)-electron layered complex metal nitrides, AMN(2) (A = Sr or Ba; M = Ti, Zr, Hf), with KCoO2-type and -NaFeO2-type crystal structures. The detailed electronic structures and electronic transport coefficients for AMN(2) compounds were calculated by using density-functional theory and Boltzmann theory, respectively. The KCoO2-type AMN(2) compounds show highly anisotropic thermoelectric properties. The effective masses at the lowest conduction bands in both KCoO2-type and -NaFeO2-type AMN(2) compounds were significantly smaller than that in three-dimensional perovskite SrTiO3, a well-known compound with good thermoelectric properties. The results suggest that the excellent thermoelectric transport properties arise from appropriate electronic structures and small effective masses in AMN(2) layered complex metal nitrides.
引用
收藏
页码:3715 / 3722
页数:8
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