Imaging results for resist films exposed to EUV radiation

被引：9

作者：

Ryoo, M

Shirayone, S

Yano, E

Okazaki, S

Kang, SJ

机构：

[1] ASET EUVL, NTT, Syst Elect Labs, Atsugi, Kanagawa 2430198, Japan

[2] Shipley Far E, Niigataken 9591914, Japan

来源：

MICROELECTRONIC ENGINEERING | 2002年 / 61-2卷

关键词：

EUV; thin layer imaging; TSI resist; bi-layer resist; single-layer resist;

D O I：

10.1016/S0167-9317(02)00504-X

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The lithographic performance of DUV-based TSI, bi-layer and single-layer CA resists imaged at the EUV wavelength is reported and compared. The images exhibit a very high aspect ratio and good profiles. This means that a DUV-based CA resist process can be used directly in EUVL without modification. However, the TSI resist has poor sensitivity and the bi-layer resist has a large line edge roughness. In EUV imaging using a single-layer resist, fine images were obtained with a resist thickness of over 0.2 mum; and the maximum thickness for EUV imaging was limited to around 0.3 mum, at which the calculated transmittance for polyvinylphenol resin at the EUV wavelength is about 30%. (C) 2002 Elsevier Science BV All rights reserved.

引用

页码：723 / 728

页数：6

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