Porous silicon-VO2 based hybrids as possible optical temperature sensor: Wavelength-dependent optical switching from visible to near-infrared range

被引:26
作者
Antunez, E. E. [1 ]
Salazar-Kuri, U. [1 ]
Estevez, J. O. [1 ]
Campos, J. [2 ]
Basurto, M. A. [1 ]
Sandoval, S. Jimenez [3 ]
Agarwal, V. [1 ]
机构
[1] UAEM, Ctr Invest Ingn & Ciencias Aplicadas, Inst Invest Ciencias Basicas & Aplicadas, Cuernavaca 62209, Morelos, Mexico
[2] UNAM, Inst Energias Renovables, Temixco 62580, Mor, Mexico
[3] Ctr Invest & Estudios Avanzados, Inst Politecn Nacl, Unidad Queretaro, Lab Invest Mat, Queretaro 76001, Qro, Mexico
关键词
VO2; THIN-FILMS; METAL-INSULATOR-TRANSITION; VANADIUM DIOXIDE; PHASE-TRANSITION; THERMOCHROMIC VO2; NANOSTRUCTURES; WINDOW;
D O I
10.1063/1.4932023
中图分类号
O59 [应用物理学];
学科分类号
摘要
Morphological properties of thermochromic VO2-porous silicon based hybrids reveal the growth of well-crystalized nanometer-scale features of VO2 as compared with typical submicron granular structure obtained in thin films deposited on flat substrates. Structural characterization performed as a function of temperature via grazing incidence X-ray diffraction and micro-Raman demonstrate reversible semiconductor-metal transition of the hybrid, changing from a low-temperature monoclinic VO2(M) to a high-temperature tetragonal rutile VO2(R) crystalline structure, coupled with a decrease in phase transition temperature. Effective optical response studied in terms of red/blue shift of the reflectance spectra results in a wavelength-dependent optical switching with temperature. As compared to VO2 film over crystalline silicon substrate, the hybrid structure is found to demonstrate up to 3-fold increase in the change of reflectivity with temperature, an enlarged hysteresis loop and a wider operational window for its potential application as an optical temperature sensor. Such silicon based hybrids represent an exciting class of functional materials to display thermally triggered optical switching culminated by the characteristics of each of the constituent blocks as well as device compatibility with standard integrated circuit technology. (C) 2015 AIP Publishing LLC.
引用
收藏
页数:8
相关论文
共 61 条
[1]  
Agarwal V., 2014, HDB POROUS SILICON
[2]   Direct synthesis of thermochromic VO2 through hydrothermal reaction [J].
Alie, David ;
Gedvilas, Lynn ;
Wang, Zhiwei ;
Tenent, Robert ;
Engtrakul, Chaiwat ;
Yan, Yanfa ;
Shaheen, Sean E. ;
Dillon, Anne C. ;
Ban, Chunmei .
JOURNAL OF SOLID STATE CHEMISTRY, 2014, 212 :237-241
[3]   Polarization selective phase-change nanomodulator [J].
Appavoo, Kannatassen ;
Haglund, Richard F., Jr. .
SCIENTIFIC REPORTS, 2014, 4
[4]   INFRARED OPTICAL PROPERTIES OF VANADIUM DIOXIDE ABOVE AND BELOW TRANSITION TEMPERATURE [J].
BARKER, AS ;
VERLEUR, HW ;
GUGGENHEIM, HJ .
PHYSICAL REVIEW LETTERS, 1966, 17 (26) :1286-+
[5]   Synthesis and characterization of VO2-based thermochromic thin films for energy-efficient windows [J].
Batista, Carlos ;
Ribeiro, Ricardo M. ;
Teixeira, Vasco .
NANOSCALE RESEARCH LETTERS, 2011, 6
[6]   Microstructure and metal-insulating transition of VO2 thin films [J].
Béteille, F ;
Mazerolles, L ;
Livage, J .
MATERIALS RESEARCH BULLETIN, 1999, 34 (14-15) :2177-2184
[7]  
Cao J, 2009, NAT NANOTECHNOL, V4, P732, DOI [10.1038/NNANO.2009.266, 10.1038/nnano.2009.266]
[8]   Evidence for a structurally-driven insulator-to-metal transition in VO2:: A view from the ultrafast timescale -: art. no. 161102 [J].
Cavalleri, A ;
Dekorsy, T ;
Chong, HHW ;
Kieffer, JC ;
Schoenlein, RW .
PHYSICAL REVIEW B, 2004, 70 (16) :1-4
[9]   Characteristics of W- and Ti-doped VO2 thin films prepared by sol-gel method [J].
Chae, B. G. ;
Kim, H. T. ;
Yun, S. J. .
ELECTROCHEMICAL AND SOLID STATE LETTERS, 2008, 11 (06) :D53-D55
[10]   Highly oriented VO2 thin films prepared by sol-gel deposition [J].
Chae, BG ;
Kim, HT ;
Yun, SJ ;
Kim, BJ ;
Lee, YW ;
Youn, DH ;
Kang, KY .
ELECTROCHEMICAL AND SOLID STATE LETTERS, 2006, 9 (01) :C12-C14