Rhombohedral and Turbostratic Boron Nitride Polytypes Investigated by X-ray Absorption Spectroscopy

被引:9
作者
Olovsson, Weine [1 ]
Magnuson, Martin [1 ]
机构
[1] Linkoping Univ, Dept Phys Chem & Biol IFM, SE-58183 Linkoping, Sweden
基金
瑞典研究理事会;
关键词
GROWTH; MORPHOLOGY; SCATTERING; GRAPHITE; CRYSTAL; ENERGY; CVD;
D O I
10.1021/acs.jpcc.2c06895
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The electronic structure of rhombohedral sp2-hybridized boron nitride (r-BN) is characterized by X-ray absorption near-edge structure spectroscopy. Measurements are performed at the boron and nitrogen K-edges (1s) and interpreted with first-principles density functional theory calculations, including final state effects by applying a core hole. We show that it is possible to distinguish between different 2D planar polytypes such as rhombohedral, twinned rhombohedral, hexagonal, and turbostratic BN by the difference in chemical shifts. In particular, the chemical shift at the B 1s-edge is shown to be significant for the turbostratic polytype. This implies that the band gap can be tuned by a superposition of different polytypes and stacking of lattice planes.
引用
收藏
页码:21101 / 21108
页数:8
相关论文
共 52 条
[11]   Growth of High Quality Epitaxial Rhombohedral Boron Nitride [J].
Chubarov, Mikhail ;
Pedersen, Henrik ;
Hogberg, Hans ;
Jensen, Jens ;
Henry, Anne .
CRYSTAL GROWTH & DESIGN, 2012, 12 (06) :3215-3220
[12]   Epitaxial CVD growth of sp2-hybridized boron nitride using aluminum nitride as buffer layer [J].
Chubarov, Mikhail ;
Pedersen, Henrik ;
Hogberg, Hans ;
Darakchieva, Vanya ;
Jensen, Jens ;
Persson, Per O. A. ;
Henry, Anne .
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 2011, 5 (10-11) :397-399
[13]   Growth of boron nitride on (0001) AlN templates by High Temperature- Hydride Vapor Phase Epitaxy (HT-HVPE) [J].
Coudurier, Nicolas ;
Boichot, Raphael ;
Mercier, Frederic ;
Reboud, Roman ;
Lay, Sabine ;
Blanquet, Elisabeth ;
Pons, Michel .
NINETEENTH EUROPEAN CONFERENCE ON CHEMICAL VAPOR DEPOSITION (EUROCVD 19), 2013, 46 :102-106
[14]   Boron nitride substrates for high-quality graphene electronics [J].
Dean, C. R. ;
Young, A. F. ;
Meric, I. ;
Lee, C. ;
Wang, L. ;
Sorgenfrei, S. ;
Watanabe, K. ;
Taniguchi, T. ;
Kim, P. ;
Shepard, K. L. ;
Hone, J. .
NATURE NANOTECHNOLOGY, 2010, 5 (10) :722-726
[15]   Determination of the optical band-gap energy of cubic and hexagonal boron nitride using luminescence excitation spectroscopy [J].
Evans, D. A. ;
McGlynn, A. G. ;
Towlson, B. M. ;
Gunn, M. ;
Jones, D. ;
Jenkins, T. E. ;
Winter, R. ;
Poolton, N. R. J. .
JOURNAL OF PHYSICS-CONDENSED MATTER, 2008, 20 (07)
[16]   Polytypes of sp2-Bonded Boron Nitride [J].
Gil, Bernard ;
Desrat, Wilfried ;
Rousseau, Adrien ;
Elias, Christine ;
Valvin, Pierre ;
Moret, Matthieu ;
Li, Jiahan ;
Janzen, Eli ;
Edgar, James Howard ;
Cassabois, Guillaume .
CRYSTALS, 2022, 12 (06)
[17]   GROWTH OF WHISKERS OF HEXAGONAL BORON-NITRIDE [J].
ISHII, T ;
SATO, T ;
SEKIKAWA, Y ;
IWATA, M .
JOURNAL OF CRYSTAL GROWTH, 1981, 52 (APR) :285-289
[18]  
JCPDS International Center for Diffraction Data U.S.A., POWDER DIFFRACTION F
[19]   Effects of electron-phonon coupling on absorption spectrum: K edge of hexagonal boron nitride [J].
Karsai, Ferenc ;
Humer, Moritz ;
Flage-Larsen, Espen ;
Blaha, Peter ;
Kresse, Georg .
PHYSICAL REVIEW B, 2018, 98 (23)
[20]   Hexagonal boron nitride grown by MOVPE [J].
Kobayashi, Y. ;
Akasaka, T. ;
Makimoto, T. .
JOURNAL OF CRYSTAL GROWTH, 2008, 310 (23) :5048-5052