Characterization of GaAs buffer layer function in GaAs/InP strained structure grown by MBE

被引：2

作者：

Lee, CT ^{[1
]}

Wang, CY ^{[1
]}

Chou, YC ^{[1
]}

机构：

[1] NATL CHUNG CHENG UNIV,INST ELECT & COMP ENGN,TAINAN,TAIWAN

来源：

THIN SOLID FILMS | 1996年 / 286卷 / 1-2期

关键词：

gallium arsenide; indium phosphide; molecular beam epitaxy (MBE); X-ray diffraction;

D O I：

10.1016/S0040-6090(95)08509-2

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

For a GaAs/InP strained structure grown by MBE, the influence of the thickness of the GaAs strained buffer layer on crystal quality was investigated and demonstrated. An X-ray diffractometer was used to measure the grown epitaxial layers. From experimental results, it was found that a thickness of strained layer was required to compensate the effect of misfit dislocation due to the lattice mismatch between GaAs and the InP substrate. The required thickness was deduced to be about 2 mu m.

引用

页码：107 / 110

页数：4

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