Nucleation on PETEOS and kinetics during the selective chemical vapor deposition of tungsten by the SiH4 reduction of WF6

被引:0
作者
Desatnik, N
Thompson, BE
机构
来源
PROCEEDINGS OF THE THIRTEENTH INTERNATIONAL CONFERENCE ON CHEMICAL VAPOR DEPOSITION | 1996年 / 96卷 / 05期
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中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
The amount of nucleation on PETEOS was experimentally measured to quantify and understand the origins of selectivity loss during selective WCVD by the SiH4 reduction of WF6. Similar to our earlier findings for the H-2 system, nucleation is highest near exposed metal areas and displays a nonmonotonic dependence on the gas velocity. However, the dependence on the size of the exposed metal area proved to be considerably smaller. Reconciliation with a mathematical model indicates that selectivity loss is caused by an intermediate generated both on the deposition surface and in the gas phase. Nucleation and deposition rates increase with increasing temperature and silane concentration, and decreasing WF6 concentration. These comparable dependencies suggest a close relationship between the two processes.
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页码:821 / 826
页数:6
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