In Situ Arsenic Doping of CdTe/Si by Molecular Beam Epitaxy

被引：19

作者：

Farrell, S. ^{[1
]}

Barnes, T. ^{[1
]}

Metzger, W. K. ^{[1
]}

Park, J. H. ^{[2
]}

Kodama, R. ^{[2
]}

Sivananthan, S. ^{[2
]}

机构：

[1] Natl Renewable Energy Lab, Golden, CO 80401 USA

[2] EPIR Technol Inc, Bolingbrook, IL 60440 USA

来源：

JOURNAL OF ELECTRONIC MATERIALS | 2015年 / 44卷 / 09期

关键词：

Molecular beam epitaxy; CdTe; arsenic doping; SIMS; photovoltaics; II-VI;

D O I：

10.1007/s11664-015-3913-3

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

p-Type doping of the absorbed layer has been a significant challenge for CdTe solar cells. In this work, we report on in situ arsenic doping of molecular beam epitaxy (MBE) CdTe grown on Si(211) and the use of a cadmium overpressure to enhance incorporation. When growing CdTe:As without a Cd overpressure, extremely high As fluxes are required to achieve noticeable amounts of arsenic incorporation. By supplying a Cd flux during growth, the As incorporation increases by an order of magnitude. By including a Cd overpressure during growth, we have obtained single-crystal CdTe:As films with As incorporation concentration of . An activation anneal was performed on these films in a rapid thermal annealing furnace, resulting in p-type layers with net carrier concentration of similar to 5 x 10(16) cm(-3).

引用

页码：3202 / 3206

页数：5

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