Valley Chern numbers and boundary modes in gapped bilayer graphene

被引：351

作者：

Zhang, Fan ^{[1
]}

MacDonald, Allan H. ^{[2
]}

Mele, Eugene J. ^{[1
]}

机构：

[1] Univ Penn, Dept Phys & Astron, Philadelphia, PA 19104 USA

[2] Univ Texas Austin, Dept Phys, Austin, TX 78712 USA

来源：

PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA | 2013年 / 110卷 / 26期

关键词：

topological states; topological defects; layer-stacking walls; few-layer graphene; TRANSPORT; STATES;

D O I：

10.1073/pnas.1308853110

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

Electronic states at domain walls in bilayer graphene are studied by analyzing their four-and two-band continuum models, by performing numerical calculations on the lattice, and by using quantum geometric arguments. The continuum theories explain the distinct electronic properties of boundary modes localized near domain walls formed by interlayer electric field reversal, by interlayer stacking reversal, and by simultaneous reversal of both quantities. Boundary mode properties are related to topological transitions and gap closures, which occur in the bulk Hamiltonian parameter space. The important role played by intervalley coupling effects not directly captured by the continuum model is addressed using lattice calculations for specific domain wall structures.

引用

页码：10546 / 10551

页数：6

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