Tunable Fano interference in intersubband absorption

被引：64

作者：

Faist, J

Sirtori, C

Capasso, F

Chu, SNG

Pfeiffer, LN

West, KW

机构：

[1] AT and T Bell Laboratories, Murray Hill, NJ 07974

来源：

OPTICS LETTERS | 1996年 / 21卷 / 13期

关键词：

D O I：

10.1364/OL.21.000985

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

New modulation-doped quantum semiconductor structures that exhibit strong Fano interference effects have been designed and demonstrated. Intersubband absorption experiments clearly demonstrate the ability to engineer Fano resonances and their evolution toward bound-to-bound transitions as the continuum is progressively modified under the action of an electric field normal to the layers. (C) 1996 Optical Society of America

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页码：985 / 987

页数：3

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