Comment on "Lateral photocurrent spreading in single quantum well infrared photodetectors" [Appl. Phys. Lett. 72, 2865 (1998)]

被引：1

作者：

Khmyrova, I ^{[1
]}

机构：

[1] Univ Aizu, Comp Solid State Phys Lab, Aizu Wakamatsu 9658580, Japan

来源：

APPLIED PHYSICS LETTERS | 1999年 / 75卷 / 06期

关键词：

D O I：

10.1063/1.124542

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：876 / 877

页数：2

共 10 条

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[2] Lateral photocurrent spreading in single quantum well infrared photodetectors
Ershov, M
[J]. APPLIED PHYSICS LETTERS, 1998, 72 (22) : 2865 - 2867
[3] Ershov M, 1998, INTERSUBBAND TRANSITIONS IN QUANTUM WELLS: PHYSICS AND DEVICES, P97
[4] Landau LD, 1984, ELECTRODYNAMICS CONT
[5] Pixelless infrared imaging device
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[6] High-frequency response of intersubband infrared photodetectors with a multiple quantum well structure
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[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1997, 36 (5A): : 2596 - 2600
[7] High-frequency performance of single quantum well infrared photodetectors at high power densities
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[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1998, 45 (08) : 1797 - 1803
[8] Analysis of integrated quantum-well infrared photodetector and light-emitting diode for implementing pixelless imaging devices
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Ryzhii, M
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1997, 33 (09) : 1527 - 1531
[9] Shur M., 1987, GaAs Devices and Circuits
[10] CAPTURE AND EMISSION OF ELECTRONS IN QUANTUM-WELLS UNDER APPLIED ELECTRIC-FIELD
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