Mask Strategy and Layout Decomposition for Self-Aligned Quadruple Patterning

被引：13

作者：

Kang, Weiling ^{[1
]}

Feng, Chen

Chen, Yijian ^{[1
]}

机构：

[1] Peking Univ, Shenzhen Grad Sch, Sch Elect & Comp Engn, Shenzhen 518055, Guangdong, Peoples R China

来源：

DESIGN FOR MANUFACTURABILITY THROUGH DESIGN-PROCESS INTEGRATION VII | 2013年 / 8684卷

关键词：

Self-aligned quadruple patterning (SAQP); spacer-expansion mask; layout decomposition/synthesis; negative tone; conflicting graph;

D O I：

10.1117/12.2011261

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Self-aligned quadruple patterning (SAQP) process is a proven technique for deep nano-scale IC manufacturing, while its mask design and layout decomposition strategy is less intuitive. In this paper, we examine both 2-and 3-mask SAQP process characteristics and develop various decomposition methods to achieve higher feature density and 2-D design flexibility. It is demonstrated that by generating assisting mandrels, SAQP layout decomposition can be degenerated into a SADP decomposition problem for which mature algorithms already exist in our EDA industry. Moreover, a spacer-expansion mask concept is introduced and a grouping/coloring algorithm to assign feature colors is developed for 3-mask SAQP layout decomposition. Finally, several 2-D layouts are successfully decomposed, showing the functionality of the decomposition method we proposed.

引用

页数：13