Use of magnetic fields in crystal growth from semiconductor melts

被引：3

作者：

Kakimoto, K

Yi, KW

机构：

[1] Fundamental Research Laboratories, NEC Corporation, Tsukuba, Ibaraki 305, 34, Miyukigaoka

来源：

PHYSICA B | 1996年 / 216卷 / 3-4期

关键词：

D O I：

10.1016/0921-4526(95)00529-3

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The three-dimensional pattern of a molten silicon flow under a magnetic field was revealed by X-ray radiography and large-scale three-dimensional numerical simulation. A flow visualization technique using X-ray radiography and a three-dimensional numerical simulation governed by a magneto-hydrodynamic equation revealed the pattern of the flow to be axisymmetric and under a low magnetic field, whereas the pattern becomes non-axisymmetric and three-dimensional under a high magnetic field even if an axisymmetric temperature boundary condition was applied. The result leads us to understand that the asymmetry originates in the intrinsic instability.

引用

页码：406 / 408

页数：3

共 4 条

[1]

Baumgartl J., 1992, ESA SP, P161

[2] INSITU MONITORING OF DOPANT CONCENTRATION VARIATION IN A SILICON MELT DURING CZOCHRALSKI GROWTH [J].